Self-assembled GaAs nano-structures in In 0.53 Ga 0.47 As matrix on (100) InP substrate has been investigated. In measured AFM images, dot-like and wire-like nano-structures were obtained with different deposition thickness. Clear phase separation in the overgrown InGaAs matrix has been seen and explained by strain compensation and surface energy minimization.
|Title of host publication||International Quantum Electronics Conference 2005|
|Number of pages||2|
|State||Published - 1 Dec 2005|
|Name||IQEC, International Quantum Electronics Conference Proceedings|