Growth and characterization of self-assembled GaAs nano-structures in InGaAs/InP matrix

Sheng-Di Lin*, Zi Chang Lin, Chien Ping Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Self-assembled GaAs nano-structures in In 0.53 Ga 0.47 As matrix on (100) InP substrate has been investigated. In measured AFM images, dot-like and wire-like nano-structures were obtained with different deposition thickness. Clear phase separation in the overgrown InGaAs matrix has been seen and explained by strain compensation and surface energy minimization.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference 2005
Pages135-136
Number of pages2
DOIs
StatePublished - 1 Dec 2005

Publication series

NameIQEC, International Quantum Electronics Conference Proceedings
Volume2005

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    Lin, S-D., Lin, Z. C., & Lee, C. P. (2005). Growth and characterization of self-assembled GaAs nano-structures in InGaAs/InP matrix. In International Quantum Electronics Conference 2005 (pp. 135-136). [1560849] (IQEC, International Quantum Electronics Conference Proceedings; Vol. 2005). https://doi.org/10.1109/IQEC.2005.1560849