Growth and characterization of p-InGaN/i-InGaN/n-GaN double-heterojunction solar cells on patterned sapphire substrates

Mu Tao Chu*, Wen Yih Liao, Ray-Hua Horng, Tsung Yen Tsai, Tsai Bau Wu, Shu Ping Liu, Ming Hsien Wu, Ray Ming Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

In this letter, InGaN-based solar cells with a p-InGaN/i-InGaN/n-GaN double-heterojunction structure were fabricated and characterized. Two kinds of sapphire substrates [i.e., a conventional sapphire substrate (CSS) and a patterned sapphire substrate (PSS)] were used for epitaxial growth. Both the solar cells grown on the CSS and the PSS demonstrated a high open-circuit voltage of 2.05 and 2.08 V, respectively. However, the short-circuit current of the solar cells grown on the PSS showed an improvement of 27.6% compared with that of the cells grown on the CSS. Such observation could be attributed to low edge-dislocation density and the increase in the light-absorption path by the scattering of interface incident light between the substrate and the epitaxial layer for the solar cell grown on the PSS.

Original languageEnglish
Article number5768062
Pages (from-to)922-924
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number7
DOIs
StatePublished - 1 Jul 2011

Keywords

  • Edge-dislocation density
  • InGaN solar cell
  • light absorption
  • patterned sapphire

Fingerprint Dive into the research topics of 'Growth and characterization of p-InGaN/i-InGaN/n-GaN double-heterojunction solar cells on patterned sapphire substrates'. Together they form a unique fingerprint.

Cite this