Growth and characterization of p-InGaN/i-InGaN/n-GaN double heterojunction solar cell on pattern sapphire substrates

Mu Tao Chu*, Wen Yih Liao, Ming Hsien Wu, Ray-Hua Horng, Tsung Yen Tsai, Shu Ping Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

InGaN-based solar cells with p-InGaN/i-InGaN/n-GaN double heterojunction structure have been fabricated and characterized in our study. Two kinds of sapphire substrate, conventional sapphire substrate and pattern sapphire substrate, were used for epitaxial growth of the heterojunction structure. Both the solar cells grown on conventional sapphire substrate and pattern sapphire substrate demonstrated high open-circuit voltage (Voc) of 2.05 V and 2.08 V, respectively. However, short-circuit current density (Jsc) of solar cell grown on pattern sapphire substrate shown an improvement of 27.6% when comparing to its grown on conventional sapphire substrate. Such an enhancement could be contributed to the increase of effective light absorption path due to the incident light scattering from textured surface on pattern sapphire substrate.

Original languageEnglish
Title of host publicationWide Bandgap Semiconductor Materials and Devices 12
Pages47-51
Number of pages5
Edition6
DOIs
StatePublished - 1 Aug 2011
EventWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number6
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

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    Chu, M. T., Liao, W. Y., Wu, M. H., Horng, R-H., Tsai, T. Y., & Liu, S. P. (2011). Growth and characterization of p-InGaN/i-InGaN/n-GaN double heterojunction solar cell on pattern sapphire substrates. In Wide Bandgap Semiconductor Materials and Devices 12 (6 ed., pp. 47-51). (ECS Transactions; Vol. 35, No. 6). https://doi.org/10.1149/1.3570845