Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells

D. K. Sengupta*, S. Kim, T. Horton, Hao-Chung Kuo, S. Thomas, S. L. Jackson, A. P. Curtis, S. G. Bishop, M. Feng, G. E. Stillman, Y. C. Chang, H. C. Liu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 angstroms) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 angstroms wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.

Original languageEnglish
Pages (from-to)225-230
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume450
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 4 Dec 19965 Dec 1996

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