Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application

Chih Jen Hsiao; Ramesh Kumar Kakkerla; Po Chun Chang; Franky Juanda Lumbantoruan; Tsu Ting Lee; Yueh Chin Lin; Shoou Jinn Chang; Edward Yi Chang

doi:10.1063/1.5008737

Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application

Chih Jen Hsiao, Ramesh Kumar Kakkerla, Po Chun Chang, Franky Juanda Lumbantoruan, Tsu Ting Lee, Yueh Chin Lin, Shoou Jinn Chang, Edward Yi Chang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 10⁶ cm^-2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm² V^-1s^-1 with a carrier concentration of 1.2 × 10¹⁷ cm^-3 is achieved in this study. The fabricated Al₂O₃/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.

Original language	English
Article number	162108
Journal	Applied Physics Letters
Volume	111
Issue number	16
DOIs	https://doi.org/10.1063/1.5008737
State	Published - 16 Oct 2017

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title = "Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application",

abstract = "In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm-2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V-1s-1 with a carrier concentration of 1.2 × 1017 cm-3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.",

author = "Hsiao, {Chih Jen} and Kakkerla, {Ramesh Kumar} and Chang, {Po Chun} and Lumbantoruan, {Franky Juanda} and Lee, {Tsu Ting} and Lin, {Yueh Chin} and Chang, {Shoou Jinn} and Chang, {Edward Yi}",

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doi = "10.1063/1.5008737",

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issn = "0003-6951",

publisher = "American Institute of Physics",

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}

Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application. / Hsiao, Chih Jen; Kakkerla, Ramesh Kumar; Chang, Po Chun; Lumbantoruan, Franky Juanda; Lee, Tsu Ting; Lin, Yueh Chin; Chang, Shoou Jinn; Chang, Edward Yi.

In: Applied Physics Letters, Vol. 111, No. 16, 162108, 16.10.2017.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application

AU - Hsiao, Chih Jen

AU - Kakkerla, Ramesh Kumar

AU - Chang, Po Chun

AU - Lumbantoruan, Franky Juanda

AU - Lee, Tsu Ting

AU - Lin, Yueh Chin

AU - Chang, Shoou Jinn

AU - Chang, Edward Yi

PY - 2017/10/16

Y1 - 2017/10/16

N2 - In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm-2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V-1s-1 with a carrier concentration of 1.2 × 1017 cm-3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.

AB - In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm-2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V-1s-1 with a carrier concentration of 1.2 × 1017 cm-3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.

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