Growth and characterization of diamond films on TiN/Si(100) by microwave plasma chemical vapor deposition

Wei Chun Chen, Wei Lin Wang, Rajanish N. Tiwari, Li Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Polycrystalline diamond films were deposited on silicon (100) substrate by microwave plasma chemical vapor disposition (MPCVD) using ~ 300 nm thick <001> textured titanium nitride (TiN) films as buffer layer which were prepared by radio-frequency reactive sputtering. The diamond/TiN films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The results show that no apparent change can be observed for the <100> oriented TiN buffer layers after MPCVD even with a negative bias voltage applied onto the substrates.

Original languageEnglish
Pages (from-to)124-127
Number of pages4
JournalDiamond and Related Materials
Volume18
Issue number2-3
DOIs
StatePublished - 1 Feb 2009

Keywords

  • Chemical vapor deposition
  • Diamond film
  • Interface characterization
  • Morphology
  • Nitrides

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