Growth and characterization of Cd1-x-yZnxMnyTe crystals

Wu-Ching Chou*, F. R. Chen, T. Y. Chiang, H. Y. Shin, C. Y. Sun, C. M. Lin, K. Chern-Yu, C. T. Tsai, D. S. Chuu

*Corresponding author for this work

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The Cd1-x-yZnxMnyTe crystals, having potential in the development of magnetic field sensitive devices, were grown by the temperature gradient solution method at 940°C. All crystals were p-type with resistivity of 107 Ω·cm. They have novel magneto-optical properties, and could be substitutes for the Cd1-xZnxTe ternary compounds in certain optoelectronic/integrated-optical device applications.

Original languageEnglish
Pages (from-to)747-751
Number of pages5
JournalJournal of Crystal Growth
Issue number4
StatePublished - 1 Dec 1996

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    Chou, W-C., Chen, F. R., Chiang, T. Y., Shin, H. Y., Sun, C. Y., Lin, C. M., Chern-Yu, K., Tsai, C. T., & Chuu, D. S. (1996). Growth and characterization of Cd1-x-yZnxMnyTe crystals. Journal of Crystal Growth, 169(4), 747-751.