Growth and characterization of a-plane Al x Ga 1-x N alloys by metalorganic chemical vapor deposition

H. M. Huang, S. C. Ling, J. R. Chen, T. S. Ko, J. C. Li, Tien-Chang Lu*, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

The non-polar a-plane Al x Ga 1-x N alloys on GaN epitaxial layer with different Al compositions (0≤x≤0.2) were grown on r-plane (1 1- 0 2) sapphire substrates by using low-pressure metalorganic chemical vapor deposition (MOCVD) and the Al composition x were estimated from the X-ray diffraction measurements. According to the result of asymmetric X-ray reciprocal space mapping, AlGaN layer was coherently strained to the underlying GaN template. The a-plane AlGaN alloy with relatively lower Al composition showed a flat surface with reduction of pits. The best mean roughness of the surface morphology was 1.18 nm. The photoluminescence (PL) result revealed that the PL peak position shifted from 3.42 to 3.87 eV with 0≤x≤0.2. Apart from the shifted peak position with increasing Al content, the PL emission intensity and surface morphology of the a-plane AlGaN alloy with relatively low Al content show slightly better characteristics than that of the a-plane GaN and AlGaN with higher Al composition.

Original languageEnglish
Pages (from-to)869-873
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number6
DOIs
StatePublished - 1 Mar 2010

Keywords

  • A2. AlGaN
  • A2. Metalorganic chemical vapor deposition
  • B1. Non-polar
  • B2. Al composition

Fingerprint Dive into the research topics of 'Growth and characterization of a-plane Al <sub>x</sub> Ga <sub>1-x</sub> N alloys by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this