Growth and characterization of 850nm InGaAsP/InGaP strain-compensated VCSELs by MOCVD

Hao-Chung Kuo, Tien-chang Lu, Y. S. Chang, F. Y. Lai, G. C. Kao, L. H. Laih, S. C. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we demonstrate the growth and characterization of 850nm oxide-confined VCSELs utilizing In 0.18 Ga 0.82 As 0.8 P 0.2 /In 0.4 Ga 0.6 P strain-compensated SC-MQWs by MOCVD. The VCSELs show very low threshold current good temperature performance, and high modulation response up to 12.5Gb/s from 25C to 85C..

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
Subtitle of host publicationPhotonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)0780377664
DOIs
StatePublished - 1 Jan 2003
Event5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan
Duration: 15 Dec 200319 Dec 2003

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume1

Conference

Conference5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
CountryTaiwan
CityTaipei
Period15/12/0319/12/03

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    Kuo, H-C., Lu, T., Chang, Y. S., Lai, F. Y., Kao, G. C., Laih, L. H., & Wang, S. C. (2003). Growth and characterization of 850nm InGaAsP/InGaP strain-compensated VCSELs by MOCVD. In CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings [1274626] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2003.1274626