Growth and characteristics of a-plane GaN on ZnO heterostructure

Huei Min Huang*, Chin Chia Kuo, Chiao Yun Chang, Yuan Ting Lin, Tien-chang Lu, Li Wei Tu, Wen Feng Hsieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We report on growth and characteristics of a-plane GaN/ZnO/GaN epitaxial structures, which can be applied to various optoelectronic devices. The unique optical transitions intrinsic to heterovalent interfaces were found and analyzed. Clear carrier localization effect in the GaN/ZnO heterointerface is observed from the S-shaped energy shift with increasing temperature in the temperature-dependent photoluminescence measurement. The carrier localization also results in strong luminescent intensity and dominates the emission spectrum at room temperature. In addition, the acceptor level originated from the Zn out-diffusion from the ZnO layer is observed in the low temperature photoluminescence spectra, and its binding energy is estimated to be about 0.311 eV.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume159
Issue number3
DOIs
StatePublished - 29 Feb 2012

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