Greatly improved efficiency droop for InGaN-based green light emitting diodes by quaternary content superlattice electron blocking layer

Da Wei Lin, An Jye Tzou, Jhih Kai Huang, Bing Cheng Lin, Chun Yen Chang, Hao-Chung Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We presented a low efficiency droop behavior green light emitting diodes (LEDs) with a quaternary content InAlGaN/GaN superlattice electron blocking layer (SL-EBL). The light output power shows a 57% enhancement and only 30% efficiency droop, which is attributed to a smooth band bending with a uniform carrier distribution.

Original languageEnglish
Title of host publication15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
EditorsYuh-Renn Wu, Joachim Piprek
PublisherIEEE Computer Society
Pages15-16
Number of pages2
ISBN (Electronic)9781479983797
DOIs
StatePublished - 10 May 2015
Event15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 - Taipei, Taiwan
Duration: 7 Sep 201511 Sep 2015

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Volume2015-May
ISSN (Print)2158-3234

Conference

Conference15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
CountryTaiwan
CityTaipei
Period7/09/1511/09/15

Keywords

  • Efficiency droop
  • Green LEDs
  • Quaternary superlattice electron blocking layer

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