Grain-size-related transient terahertz mobility of femtosecond-laser- annealed polycrystalline silicon

Y. C. Wang; Hye Young Ahn; C. H. Chuang; Y. P. Ku; C. L. Pan

doi:10.1007/s00340-009-3580-2

Grain-size-related transient terahertz mobility of femtosecond-laser- annealed polycrystalline silicon

Y. C. Wang, Hye Young Ahn, C. H. Chuang, Y. P. Ku, C. L. Pan^*

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We investigated carrier-relaxation dynamics of femtosecond laser annealed (FLA) polycrystalline silicon (poly-Si). The correlation between morphology and electrical properties of poly-Si after femtosecond laser annealing is elucidated by optical-pump-terahertz-probe and terahertz time-domain spectroscopies. The transient conductivities of FLA-processed poly-Si with large (∼500 nm) and small (∼50 nm) grain sizes were both well fitted by the Drude model in the terahertz regime from 0.4 to 2 THz. The transient mobilities of these materials were determined to be 175±19.4 and 94.5±20.2 cm ²/V∈s, respectively. After annealing, reduction of deep-state density rather than tail-state density in large-grain poly-Si is responsible for its higher mobility.

Original language	English
Pages (from-to)	181-185
Number of pages	5
Journal	Applied Physics B: Lasers and Optics
Volume	97
Issue number	1
DOIs	https://doi.org/10.1007/s00340-009-3580-2
State	Published - 1 Sep 2009

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title = "Grain-size-related transient terahertz mobility of femtosecond-laser- annealed polycrystalline silicon",

abstract = "We investigated carrier-relaxation dynamics of femtosecond laser annealed (FLA) polycrystalline silicon (poly-Si). The correlation between morphology and electrical properties of poly-Si after femtosecond laser annealing is elucidated by optical-pump-terahertz-probe and terahertz time-domain spectroscopies. The transient conductivities of FLA-processed poly-Si with large (∼500 nm) and small (∼50 nm) grain sizes were both well fitted by the Drude model in the terahertz regime from 0.4 to 2 THz. The transient mobilities of these materials were determined to be 175±19.4 and 94.5±20.2 cm 2/V∈s, respectively. After annealing, reduction of deep-state density rather than tail-state density in large-grain poly-Si is responsible for its higher mobility.",

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AU - Wang, Y. C.

AU - Ahn, Hye Young

AU - Chuang, C. H.

AU - Ku, Y. P.

AU - Pan, C. L.

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