Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

Chih Pin Lin, Ching Ting Lin, Pang Shiuan Liu, Ming Jiue Yu, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages501-504
Number of pages4
ISBN (Electronic)9781509039142
DOIs
StatePublished - 24 Aug 2016
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 22 Aug 201625 Aug 2016

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period22/08/1625/08/16

Fingerprint Dive into the research topics of 'Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide'. Together they form a unique fingerprint.

Cite this