Grain growth of (111) nanotwined Cu on (100)-oriented Cu films

Hsin Yong Liu*, Chih Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In order to limit the scattering of electron at grain boundaries (GBs) which contributes to the resistivity, it is necessary to reduce the number of GBs by increasing the grain size of Cu films. The grain growth evolution in nanotwinned Cu (nt-Cu) films prepared by electrodeposition is investigated in this study. For the purpose of understanding the nt-Cu grain growth occur on (100)-oriented Cu, a highly-textured nt-Cu film on (100)-oriented Cu seed layer has been electroplated. After that, the nt-Cu grain growth characterization on (100)-oriented Cu seed layer was performed. As the annealing temperature increases, the grain growth is enhanced; meanwhile the (111)-oriented nt-Cu film gradually grow into (100)-oriented Cu films. Cross sectional microstructure observations demonstrate the process of grain growth on bilayer Cu. Our results show that the grain size can be as large as 74 μm after 400 °C for 1 h for a 6 μm nt-Cu film. At temperatures around 200 °C, nt-Cu shows stability characteristics instead of growing into larger grains.

Original languageEnglish
Title of host publication11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016 - Proceedings
PublisherIEEE Computer Society
Pages45-47
Number of pages3
ISBN (Electronic)9781509047697
DOIs
StatePublished - 27 Dec 2016
Event11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016 - Taipei, Taiwan
Duration: 26 Oct 201628 Oct 2016

Publication series

NameProceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN (Print)2150-5934
ISSN (Electronic)2150-5942

Conference

Conference11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016
CountryTaiwan
CityTaipei
Period26/10/1628/10/16

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  • Cite this

    Liu, H. Y., & Chen, C. (2016). Grain growth of (111) nanotwined Cu on (100)-oriented Cu films. In 11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016 - Proceedings (pp. 45-47). [7800027] (Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT). IEEE Computer Society. https://doi.org/10.1109/IMPACT.2016.7800027