Gold-free fully cu-metallized InGaP/InGaAs/Ge triple-junction solar cells

Ching Hsiang Hsu*, Edward Yi Chang, Hsun Jui Chang, Hung Wei Yu, Hong Quan Nguyen, Chen Chen Chung, Jer Shen Maa, Krishna Pande

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Copper contacts and interconnects were developed for GaAs and Ge for low-cost solar cell application. In addition, thermally annealed Pd/Ge and Pt/Ti/Pt metallizations were created for ohmic contacts to n-GaAs and p-Ge with contact resistance of 4.4 × 10-6 and 6.9 × 10-6 Ω cm2, respectively. Utilizing such metallization structure for InGaP/InGaAs/Ge triple-junction device structure solar cells were fabricated that delivered conversion efficiency of 23.11%, which is average efficiency for the above device structure.

Original languageEnglish
Article number6948363
Pages (from-to)1275-1277
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number12
DOIs
StatePublished - 1 Dec 2014

Keywords

  • copper metallization
  • III-V concentrator solar cell
  • low cost.
  • ohmic contact

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