Global parameter extraction for a multi-gate MOSFETs compact model

Shijing Yao*, Tanvir H. Morshed, Darsen D. Lu, Sriramkumar Venugopalan, Weize Xiong, C. R. Cleavelin, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

13 Scopus citations

Abstract

A global I-V parameter extraction methodology for multi-gate MOSFET compact model is presented for the first time. New L-dependent properties are proposed to enable the accurate modeling of transistors over a wide range of gate length using a single set of model parameters. The results are verified with FinFET experimental data with effective channel lengths from 30nm to 10um. For both n and p type devices, excellent agreement between the data and the model has been demonstrated.

Original languageEnglish
Title of host publication2010 International Conference on Microelectronic Test Structures, 23rd IEEE ICMTS Conference Proceedings
Pages194-197
Number of pages4
DOIs
StatePublished - 29 Jun 2010
Event2010 International Conference on Microelectronic Test Structures, ICMTS 2010 - Hiroshima, Japan
Duration: 22 Mar 201025 Mar 2010

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Conference

Conference2010 International Conference on Microelectronic Test Structures, ICMTS 2010
CountryJapan
CityHiroshima
Period22/03/1025/03/10

Keywords

  • BSIM-CMG
  • Global extraction
  • Multi-gate

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