Giant magnetocurrent in silicon-base magnetic tunneling transistor

Y. W. Huang, C. K. Lo*, Y. D. Yao, L. C. Hsieh, J. J. Ju, Der-Ray Huang, J. H. Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations


A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

Original languageEnglish
Pages (from-to)279-282
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Issue number1-3
StatePublished - 1 Nov 2004
EventInternational Symposium on Advanced Magnetic Technologies - Taipei, Taiwan
Duration: 13 Nov 200316 Nov 2003


  • Magnetic tunneling junction
  • Magnetocurrent
  • Spin transistor

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