A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.
|Number of pages||4|
|Journal||Journal of Magnetism and Magnetic Materials|
|State||Published - 1 Nov 2004|
|Event||International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan|
Duration: 13 Nov 2003 → 16 Nov 2003
- Magnetic tunneling junction
- Spin transistor