Gettering of nickel within the Ni-metal induced lateral crystallization polycrystalline silicon film through the contact holes

Chen-Ming Hu*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Ni-metal-induced lateral crystallization (NILC) of amorphous Si (α-Si) has been used to fabricate high-performance lowtemperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). The current crystallization technology, however, often leads to trap Ni and NiSi2 precipitates, which degrade the device performance. In this study, α-Si film was coated on the top of contact holes as Ni-gettering layer. It was found the Ni-metal impurity within the NILC poly-Si film was reduced without addition mask.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number45-49
DOIs
StatePublished - 14 Dec 2007

Keywords

  • Nickel gettering
  • NILC
  • Polycrystalline silicon

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