Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate

Chih Yuan Hou, Chi Ching Lin, Yew-Chuhg Wu*

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.

Original languageEnglish
Pages (from-to)6803-6805
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number9 A
DOIs
StatePublished - 7 Sep 2006

Keywords

  • Gettering
  • NILC
  • Thin-film transistors

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