Germanium-source tunnel field effect transistors with record high I ON/IOFF

Hwan Kim Sung, Hei Kam, Chen-Ming Hu, Tsu Jae King Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

195 Scopus citations

Abstract

Tunnel field effect transistors (TFETs) with record high I ON/IOFF ratio (>106) for low-voltage (0.5V) operation are achieved by using germanium in the source region to achieve a small tunnel bandgap. The measured data are well explained by the theoretical band-to-band tunneling current model. Using the calibrated analytical model, the energy-delay performance of TFET-based technology is compared against that of conventional CMOS technology, at the 65nm node. The TFET is projected to provide dramatic improvement in energy efficiency for performance in the range up to ∼0.5GHz.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages178-179
Number of pages2
StatePublished - 16 Nov 2009
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 16 Jun 200918 Jun 2009

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period16/06/0918/06/09

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    Sung, H. K., Kam, H., Hu, C-M., & Liu, T. J. K. (2009). Germanium-source tunnel field effect transistors with record high I ON/IOFF. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 178-179). [5200679] (Digest of Technical Papers - Symposium on VLSI Technology).