Germanium pMOSFETs with schottky-barrier germanide S/D, high-k gate dielectric and metal gate

Shiyang Zhu, Rui Li, S. J. Lee, M. F. Li, Anyan Du, Jagar Singh, Chunxiang Zhu, Albert Chin, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

Schottky-barrier source/drain (S/D) Germanium p-channel MOSFETs are demonstrated for the first time with HfAIO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as ~5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi—Si contact as well as the higher mobility of Ge channel than that of Si.

Original languageEnglish
Title of host publicationSelected Semiconductor Research
PublisherImperial College Press
Pages346-348
Number of pages3
ISBN (Electronic)9781848164079
ISBN (Print)9781848164062
DOIs
StatePublished - 1 Jan 2011

Keywords

  • Germanium
  • High-k
  • MOSFET
  • Metal gate
  • Schottky

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