Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate

Shiyang Zhu*, Rui Li, S. J. Lee, M. F. Li, Anyan Du, Jagar Singh, Chunxiang Zhu, Albert Chin, D. L. Kwong

*Corresponding author for this work

Research output: Contribution to journalArticle

98 Scopus citations

Abstract

Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as ∼5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si.

Original languageEnglish
Pages (from-to)81-83
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number2
DOIs
StatePublished - 1 Feb 2005

Keywords

  • Germanium
  • High-Κ
  • MOSFET
  • Metal gate
  • Schottky

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