Germanium p MOSFET with HfON gate dielectric

Zhang Qingchun, Wu Nan, Zhu Chunxiang, Liu Haitao, M. F. Li, D. S.H. Chan, Albert Chin, D. L. Kwong, L. K. Bera, N. Balasubmmanian, A. Y. Du, C. H. Tung, Johnny K.O. Sin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Germanium is promising for future advanced CMOS devices because of its high mobility. But the lack of a stable Ge oxide makes it difficult to fabricate a germanium MOSFET. Inspired by the recent progress of high-k dielectric gate stack in Si MOSFET applications, the MOSFETs with Ge substrate have attracted more and more attention again. High-mobility p-channel germanium MOSFETs with ultra low EOT (6-10Å) have been reported with ultra-thin ZrOz.' Among various high-K gate dielectrics, HtO2 and Hf based dielectric materials have been researched as the most promising candidates for gate stack. Bai et al studied the Ge MOS capacitors with HfO2 dielecmcs.' It was found that the HfO2 without surface nitridation showed both a large EOT and a large leakage current density, while surface nitridation can suppress the interfacial growth and further achieve a small EOT and low leakage current at the same time. However, surface nitridation increases the process complexity and the presence of hydrogen increases the trapping rates. Hahium.oxynitride HfOx,NHfOy has been proved to be a high stable gate dielectric material with simple process procedure. It has higher crystallization temperature which may be beneficial to keep a low leakage current, and the nitrogen incorporation strengthens the immunity to oxygen diffusion which can suppress the interfacial layer growth for a low EOT. In this work, we studied the electrical performance of Ge MOSFET with a thin Hf0x,NHf0y gate dielectric.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
StatePublished - 1 Jan 2003
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 10 Dec 200312 Dec 2003

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings


ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States

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