Germanium N and P multifin field-effect transistors with high-performance germanium (Ge)p+n and n+p heterojunctions formed on si substrate

Che Wei Chen*, Cheng Ting Chung, Ju Yuan Tzeng, Pin Hui Li, Pang Sheng Chang, Chao-Hsin Chien, Guang Li Luo

*Corresponding author for this work

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Engineering & Materials Science