Geometry Effects in MOSFET Channel Length Extraction Algorithms

M. R. Wordeman, J. Y.C. Sun, S. E. Laux

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Several techniques have been proposed to determine the channel length and series resistance of MOSFET's. Numerical simulations show that these algorithms must carefully account for two-dimensional geometry effects in order to extract parameters which are physically meaningful. New techniques which take these effects into account are proposed for extracting the channel length and series resistance.

Original languageEnglish
Pages (from-to)186-188
Number of pages3
JournalIEEE Electron Device Letters
Volume6
Issue number4
DOIs
StatePublished - Apr 1985

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