Generation-annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized silicon

Chih Tang Sah*, Jack Yuan Chen Sun, Joseph Jeng Tao Tzou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

67 Scopus citations

Abstract

Experimental evidence of the generation of a shallow bulk donor center in the surface space-charge layer of oxidized silicon by exposure to a high dose of 10-keV electron is first summarized. An extensive new study of the generation and annealing kinetics of a similar bulk donor in p-Si metal-oxide-semiconductor capacitors subjected to as much as 20 C/cm2 avalanche electron injection is then reported. The generation kinetics from 180 to 298 K is first order with a constant total donor concentration of about 1×10 17 cm-3 which is independent of both injection temperature and voltage, and a generation cross section given by 8.6×10-18 exp(-113 meV/kT) cm 2, which increases with injection voltage. Rapid annealing begins at 50°C following a second-order kinetics from 50°C to 150°C with an annealing rate given by 4.2×10-7 exp(-1.07 eV/kT) cm3/sec. Analyses of the results suggest that a bulk oxygen donor is the origin, and the bimolecular annealing kinetics involves hydrogen bonding of the oxygen donor dangling bonds.

Original languageEnglish
Pages (from-to)944-956
Number of pages13
JournalJournal of Applied Physics
Volume54
Issue number2
DOIs
StatePublished - 1983

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