Generation and recombination rates at ZnTe:O intermediate band states

Weiming Wang*, Albert Lin, Jamie D. Phillips, Wyatt K. Metzger

*Corresponding author for this work

Research output: Contribution to journalArticle

48 Scopus citations

Abstract

Carrier generation and recombination processes of ZnTeO thin films are studied by time-resolved photoluminescence, where carrier lifetimes at oxygen states and the conduction band are inferred to be >1 μs and <100 ps, respectively. The radiative recombination coefficient for optical transitions from oxygen states to the valence band is extracted to be 1.2× 10-10 cm3 sec-1 based on the excitation dependence of decay time constants. Rate equation analysis further suggests an increase in electron lifetime at the conduction band as oxygen states occupation is critical in achieving high conversion efficiency for solar cells based on multiphoton processes in these materials.

Original languageEnglish
Article number261107
JournalApplied Physics Letters
Volume95
Issue number26
DOIs
StatePublished - 1 Dec 2009

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