The Ge100-xCux thin films (x = 50 at.%-69 at.%) were deposited on nature oxidized Si (100) wafer by dc co-sputtering of Ge and Cu targets. Microstructures was analyzed by X-ray diffractometer. The optical and thermal properties were measured from static test. It was found that the as-deposited phase was single supersaturated ε-Cu3Ge phase and it was transformed to Ge and ε-Cu3Ge coexisting phases after annealing at 400°C. The reflectivity of as-deposited film was higher than that of annealed film.
- Inorganic optical recording media