GeCu thin films for inorganic write-once media

T. H. Wu*, P. C. Kuo, E. F. Tsai, D. Y. Chiang, W. T. Tang, T. R. Jeng, R. P. Cheng, W. C. Hsu, Der-Ray Huang, S. C. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


The Ge100-xCux thin films (x = 50 at.%-69 at.%) were deposited on nature oxidized Si (100) wafer by dc co-sputtering of Ge and Cu targets. Microstructures was analyzed by X-ray diffractometer. The optical and thermal properties were measured from static test. It was found that the as-deposited phase was single supersaturated ε-Cu3Ge phase and it was transformed to Ge and ε-Cu3Ge coexisting phases after annealing at 400°C. The reflectivity of as-deposited film was higher than that of annealed film.

Original languageEnglish
Pages (from-to)856-858
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number2
StatePublished - 1 Feb 2007


  • GeCu
  • Inorganic optical recording media
  • Write-once

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