Ge/Al bilayer thin films are prepared by magnetron sputtering. Thermal analysis shows that the phase change of the film occurs at 275°C. Contrasts at 650 nm and 405 nm wavelength are 71.4% and 31.1% respectively.
|Title of host publication||Optical Data Storage 2007|
|State||Published - 23 Nov 2007|
|Event||Optical Data Storage 2007 - Portland, OR, United States|
Duration: 20 May 2007 → 23 May 2007
|Name||Proceedings of SPIE - The International Society for Optical Engineering|
|Conference||Optical Data Storage 2007|
|Period||20/05/07 → 23/05/07|