Ge/Al bilayer thin film for optical write-once media

T. H. Wu*, P. C. Kuo, Jung Po Chen, Chih Yuan Wu, Po Fu Yen, Tzuan Ren Jeng, Der-Ray Huang, Sin Liang Ou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ge/Al bilayer thin films are prepared by magnetron sputtering. Thermal analysis shows that the phase change of the film occurs at 275°C. Contrasts at 650 nm and 405 nm wavelength are 71.4% and 31.1% respectively.

Original languageEnglish
Title of host publicationOptical Data Storage 2007
DOIs
StatePublished - 23 Nov 2007
EventOptical Data Storage 2007 - Portland, OR, United States
Duration: 20 May 200723 May 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6620
ISSN (Print)0277-786X

Conference

ConferenceOptical Data Storage 2007
CountryUnited States
CityPortland, OR
Period20/05/0723/05/07

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