Ge pMOSFETs with MOCVD HfO2 gate dielectric

Wu Nan, Zhang Qingchun, Zhu Chunxiang, M. F. Li, D. S.H. Chan, Albert Chin, D. L. Kwong, L. K. Bera, N. Balasubramanian, A. Y. Du, C. H. Tung, Haitao Liu, Johnny K.O. Sins

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

With research on high-k gate dielectric for VLSI applications, Ge has been attractive for alternative channel material due to its high electron and hole mobility [1, 2]. Furthermore, Ge substrate is also a potential choice for supply voltage scaling down to meet ITRS requirements [3]. Recently, mobility enhancements of germanium pMOSFETs have been demonstrated by using Ge oxynitride, ultra-thin ZrO2 and A12O3 [4-6]. W.P. Bai also reported high quality Ge MOS-C with HfO2 [7]. However, the material property of MOCVD HfO2 on Ge is not well-known yet, neither the performance of MOSFETs. In this work, we report our findings along the device fabrication as well as the well-behaved pMOSFET transistor characteristics.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages252-253
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
StatePublished - 1 Jan 2003
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 10 Dec 200312 Dec 2003

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period10/12/0312/12/03

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