Ge nanocrystals metal-oxide-semiconductor capacitors with Ge nanocrystals formed by oxidation of poly-Si0.88Ge0.12

J. H. Wu*, Pei-Wen Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Original languageEnglish
Title of host publicationThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
DOIs
StatePublished - 1 Dec 2006
EventThird International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States
Duration: 15 May 200617 May 2006

Publication series

NameThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume2006

Conference

ConferenceThird International SiGe Technology and Device Meeting, ISTDM 2006
CountryUnited States
CityPrinceton, NJ
Period15/05/0617/05/06

Cite this