Ge in main-stream CMOS: A future or fancy?

Pranav Kalavade, Jeorg Schulze, Sanjay Banerjee, Albert Chin, Jack Kavalieros

Research output: Contribution to journalConference articlepeer-review

Abstract

As scaling continues, attention is returning to germanium and Ge-on-insulator (GOI) MOSFETs. Why? Is Ge technology a viable alternative or a fanciful diversion? This session will debate these questions? Are Ge MOSFETs more scalable? Are high-k dielectrics an enabler for Ge? Will GOI be cost-effective? In what circuits are the benefits of Ge technology most pronounced: low power, high performance, memory, optoelectronics?

Original languageEnglish
Number of pages1
JournalDevice Research Conference - Conference Digest, DRC
DOIs
StatePublished - 1 Dec 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: 21 Jun 200423 Jun 2004

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