Ge FinFET CMOS Inverters with Improved Channel Surface Roughness by Using In-situ ALD Digital O3 Treatment

M. S. Yeh, G. L. Luo, F. J. Hou, P. J. Sung, C. J. Wang, C. J. Su, C. T. Wu, Y. C. Huang, T. C. Hong, Tien-Sheng Chao, B. Y. Chen, K. M. Chen, M. Izawa, M. Miura, M. Morimoto, H. Ishimura, Y. J. Lee, W. F. Wu, W. K. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Improved electrical characteristics of CMOS inverters composed of Ge n- and p-finFETs were demonstrated by utilizing newly introduced Ge surface treatments. In-situ ALD digital O3 treatment was adopted on the surface of Ge fin sidewall in order to reduce the roughness and etching damages through the GeO desorption mechanism. By combining this treatment with optimized microwave annealing (MWA), SS and the ION/IOFF ratio were remarkably improved in both n-finFET and p-finFET, and Ge CMOS inverters with high voltage gain of 50.3 V/V at low VD=0.6 V was realized.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages205-207
Number of pages3
ISBN (Print)9781538637111
DOIs
StatePublished - 26 Jul 2018
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 13 Mar 201816 Mar 2018

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period13/03/1816/03/18

Keywords

  • ALD
  • CMOS
  • FinFET
  • Ge
  • SS
  • and MWA

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    Yeh, M. S., Luo, G. L., Hou, F. J., Sung, P. J., Wang, C. J., Su, C. J., Wu, C. T., Huang, Y. C., Hong, T. C., Chao, T-S., Chen, B. Y., Chen, K. M., Izawa, M., Miura, M., Morimoto, M., Ishimura, H., Lee, Y. J., Wu, W. F., & Yeh, W. K. (2018). Ge FinFET CMOS Inverters with Improved Channel Surface Roughness by Using In-situ ALD Digital O3 Treatment. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 205-207). [8421457] (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421457