Ge epitaxial growth on GaAs substrates for application to Ge-source/drain GaAs MOSFETs

Guang Li Luo*, Zong You Han, Chao-Hsin Chien, Chih Hsin Ko, Clement H. Wann, Hau Yu Lin, Yi Ling Shen, Cheng Ting Chung, Shih Chiang Huang, Chao Ching Cheng, Chun Yen Chang

*Corresponding author for this work

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Abstract

Ge films were epitaxially grown on GaAs(100) substrates and Ga 0.88In0.12 As (100) virtual substrates using an ultrahigh vacuum/chemical vapor deposition system. The incubation time of Ge growth depends on Ga(In)As surfaces that were processed by different wet chemical solutions. Growth behaviors, such as island growth at the initial stages and selective growth into recessed regions of GaAs, were studied by transmission electron microscopy. To test the quality of Ge grown on GaAs, an n+ -Ge/p-GaAs diode was fabricated. We propose that through Ge selective epitaxial growth, Ge can be used as the source-drain of a GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) to overcome some intrinsic limitations of this device.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number1
DOIs
StatePublished - 1 Jan 2010

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    Luo, G. L., Han, Z. Y., Chien, C-H., Ko, C. H., Wann, C. H., Lin, H. Y., Shen, Y. L., Chung, C. T., Huang, S. C., Cheng, C. C., & Chang, C. Y. (2010). Ge epitaxial growth on GaAs substrates for application to Ge-source/drain GaAs MOSFETs. Journal of the Electrochemical Society, 157(1). https://doi.org/10.1149/1.3246000