Ge channel MOSFETs directly on silicon

Che Wei Chen, Cheng Ting Chung, Chao-Hsin Chien

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents high performance Ge/Si diode, trigate Ge PFET, junctionless trigate Ge PFET and strained Ge NFET directly on Si wafer. The leakage current of the Ge/Si diode is as low as <10-7 A/cm2. Trigate PFET depicts a driving current of 22 μA/μm at VG = -2 V and a low OFF-current of 3 nA/μm at VG = 2 V. Junctionless trigate PFET shows ION/IOFF ratio of ∼6×104 (ID), ∼6×105 (IS), and the remarkably low off-current of 450 pA/μm at VD = -0.1 V. Strained trigate Ge NFET is demonstrated.

Original languageEnglish
Title of host publication2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479923342
DOIs
StatePublished - 13 Mar 2014
Event2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China
Duration: 18 Jun 201420 Jun 2014

Publication series

Name2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Conference

Conference2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
CountryChina
CityChengdu
Period18/06/1420/06/14

Keywords

  • diode
  • germanium
  • junctionless
  • trigate

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