Gauging film thickness: A comparison of an x-ray diffraction technique with Rutherford backscattering spectrometry

Betty Coulman*, Haydn Chen, L. E. Rehn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd2Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200°C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.

Original languageEnglish
Pages (from-to)643-645
Number of pages3
JournalJournal of Applied Physics
Volume57
Issue number2
DOIs
StatePublished - 1 Dec 1985

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