Gate recessed quasi-normally off Al 2 O 3 /AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using PEALD AlN interfacial passivation layer

Ting En Hsieh, Edward Yi Chang, Yi Zuo Song, Yueh Chin Lin, Huan Chung Wang, Shin Chien Liu, Sayeef Salahuddin, Chen-Ming Hu

Research output: Contribution to journalArticle

66 Scopus citations

Abstract

In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using Al 2 O 3 /AlN stack gate insulator is presented. The trapping effect of Al 2 O 3 /GaN interface was effectively reduced with the insertion of 2-nm AlN thin interfacial passivation layer grown by plasma enhanced atomic layer deposition. The device exhibits a threshold voltage of +1.5 V, with current density of 420 mA/mm, an OFF-state breakdown voltage of 600 V, and high ON/OFF drain current ratio of ∼10 9 .

Original languageEnglish
Article number6812120
Pages (from-to)732-734
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number7
DOIs
StatePublished - 1 Jan 2014

Keywords

  • GaN
  • gate insulator
  • gate recessed
  • interfacial passivation layer (IPL)
  • metal-insulator-semiconductor high electron-mobility transistor (MIS-HEMT)
  • normally-OFF
  • plasma enhanced atomic layer deposition (PE-ALD)
  • threshold voltage hysteresis

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