Gate material dependence of process charging damage in thin gate oxide

A. Acovic*, A. Ray, J. Sun, J. Herman, T. Furukawa, R. Geiger, K. Beyer, V. McGahay, S. Greco, W. Abadeer

*Corresponding author for this work

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

Effects of plasma induced charging on dielectric integrity in a CMOS technology with n- and p- type polysilicon gates have been studied in detail. We show that p-gates are much more sensitive to charging than n-gates. Charge to breakdown in capacitors with a large p-type polysilicon plate is also reduced by charging damage, in spite of their low antenna ratios. We attribute this sensitivity of p-type gates to the low QBD of p-type gate capacitors for electron injection from the gate. By optimizing the fabrication processes, the amount of charging damage has been reduced to a negligible value, and good quality gate oxide has been achieved. Care must be exercised when interpreting QBD and leakage data on capacitors, to eliminate the effects of process induced charging.

Original languageEnglish
Pages160-163
Number of pages4
StatePublished - 1996
EventProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA
Duration: 13 May 199614 May 1996

Conference

ConferenceProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
CitySanta Clara, CA, USA
Period13/05/9614/05/96

Fingerprint Dive into the research topics of 'Gate material dependence of process charging damage in thin gate oxide'. Together they form a unique fingerprint.

  • Cite this

    Acovic, A., Ray, A., Sun, J., Herman, J., Furukawa, T., Geiger, R., Beyer, K., McGahay, V., Greco, S., & Abadeer, W. (1996). Gate material dependence of process charging damage in thin gate oxide. 160-163. Paper presented at Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA, .