Gate length scaling effects in ESD protection ultrathin body SOI devices

Jam Wem Lee*, Yi-Ming Li, S. M. Sze

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we experimentally explore the gate length scaling effects that related to the abrupt degradation of electrostatic discharge (ESD) robustness for ultra-thin body silicon on insulator (SOI) devices and integrated circuits (ICs). It is found that, for the ultra-thin body SOI, the ESD protection devices fail when the gate length of protection devices is smaller than the 0.18 micron meter (um). Taking the effects into consideration, it is believed that optimizations among the device profiles, geometries, and the protection efficiency should be done simultaneously for high performance VLSI circuit design, in particular for modern system-on-chip (SoC). This observation is very useful in both the nano-scale CMOS fabrication technology and VLSI circuit design.

Original languageEnglish
Title of host publication2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
EditorsM. Laudon, B. Romanowicz
Pages9-12
Number of pages4
StatePublished - Jan 2004
Event2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
Duration: 7 Mar 200411 Mar 2004

Publication series

Name2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume2

Conference

Conference2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
CountryUnited States
CityBoston, MA
Period7/03/0411/03/04

Keywords

  • ESD
  • Optimization
  • Short channel
  • SoC
  • SOI
  • Ultrathin body SOI
  • VLSI

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  • Cite this

    Lee, J. W., Li, Y-M., & Sze, S. M. (2004). Gate length scaling effects in ESD protection ultrathin body SOI devices. In M. Laudon, & B. Romanowicz (Eds.), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 (pp. 9-12). (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 2).