Gate last MOSFET with air spacer and self-aligned contacts for dense memories

Jemin Park; Chen-Ming Hu

doi:10.1109/VTSA.2009.5159312

Gate last MOSFET with air spacer and self-aligned contacts for dense memories

Jemin Park^*, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Gate-last metal-gate/high-k technology will allow MOSFET scaling to unprecedented levels. When the gate length is small, the dominant capacitance in the MOSFET is the gate to contact-plug capacitance. This is especially so with SAC (self-aligned contact) technology popular with high density memories. This papers proposes a compact SAC gatelast air-spacer structure that yield small size, high speed , and low switching energy. The improvement over the conventional SAC device increases dramatically with scaling.

Original language	English
Title of host publication	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages	105-106
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159312
State	Published - 1 Dec 2009
Event	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan Duration: 27 Apr 2009 → 29 Apr 2009

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Country	Taiwan
City	Hsinchu
Period	27/04/09 → 29/04/09

Access to Document

10.1109/VTSA.2009.5159312

Link to publication in Scopus

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Cite this

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title = "Gate last MOSFET with air spacer and self-aligned contacts for dense memories",

abstract = "Gate-last metal-gate/high-k technology will allow MOSFET scaling to unprecedented levels. When the gate length is small, the dominant capacitance in the MOSFET is the gate to contact-plug capacitance. This is especially so with SAC (self-aligned contact) technology popular with high density memories. This papers proposes a compact SAC gatelast air-spacer structure that yield small size, high speed , and low switching energy. The improvement over the conventional SAC device increases dramatically with scaling.",

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Park, J & Hu, C-M 2009, Gate last MOSFET with air spacer and self-aligned contacts for dense memories. in 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159312, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 105-106, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, 27/04/09. https://doi.org/10.1109/VTSA.2009.5159312

Gate last MOSFET with air spacer and self-aligned contacts for dense memories. / Park, Jemin; Hu, Chen-Ming.

2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 105-106 5159312 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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