TY - GEN
T1 - Gate last MOSFET with air spacer and self-aligned contacts for dense memories
AU - Park, Jemin
AU - Hu, Chen-Ming
PY - 2009/12/1
Y1 - 2009/12/1
N2 - Gate-last metal-gate/high-k technology will allow MOSFET scaling to unprecedented levels. When the gate length is small, the dominant capacitance in the MOSFET is the gate to contact-plug capacitance. This is especially so with SAC (self-aligned contact) technology popular with high density memories. This papers proposes a compact SAC gatelast air-spacer structure that yield small size, high speed , and low switching energy. The improvement over the conventional SAC device increases dramatically with scaling.
AB - Gate-last metal-gate/high-k technology will allow MOSFET scaling to unprecedented levels. When the gate length is small, the dominant capacitance in the MOSFET is the gate to contact-plug capacitance. This is especially so with SAC (self-aligned contact) technology popular with high density memories. This papers proposes a compact SAC gatelast air-spacer structure that yield small size, high speed , and low switching energy. The improvement over the conventional SAC device increases dramatically with scaling.
UR - http://www.scopus.com/inward/record.url?scp=77950161030&partnerID=8YFLogxK
U2 - 10.1109/VTSA.2009.5159312
DO - 10.1109/VTSA.2009.5159312
M3 - Conference contribution
AN - SCOPUS:77950161030
SN - 9781424427857
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 105
EP - 106
BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Y2 - 27 April 2009 through 29 April 2009
ER -