Gate insulator morphology-dependent reliability in organic thin-film transistors

Hua Mao Chen*, Ting Chang Chang, Ya-Hsiang Tai, Hsiao Cheng Chiang, Kuan Hsien Liu, Min Chen Chen, Cheng Chieh Huang, Chao Kuei Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this letter, we investigated the gate insulator morphology affecting on the electric characteristic variation for organic thin-film transistors (OTFTs). From the transfer characteristics, there is a result with leakage current when the gate voltage is lower than the threshold voltage, which is due to the gate insulator thickness variation. Furthermore, regardless of whether the OTFT is operated under positive or negative bias stress, the more severe degradation happened in the hump region of transfer characteristics. Because a thinner gate insulator causes a high electric field, more charges are trapped in a gate dielectric stack.

Original languageEnglish
Article number7360914
Pages (from-to)228-230
Number of pages3
JournalIEEE Electron Device Letters
Volume37
Issue number2
DOIs
StatePublished - 1 Feb 2016

Keywords

  • morphology
  • OTFT
  • reliability

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