Gate injection transistor (GIT) - A normally-off AlGaN/GaN power transistor using conductivity modulation

Yasuhiro Uemoto*, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

626 Scopus citations

Abstract

We have developed a normally-off GaN-based transistor using conductivity modulation, which we call a gate injection transistor (GIT). This new device principle utilizes hole-injection from the p-AlGaN to the AlGaN/ GaN heterojunction, which simultaneously increases the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits a threshold voltage of 1.0 V with a maximum drain current of 200 mA/mm, in which a forward gate voltage of up to 6 V can be applied. The obtained specific ON-state resistance (RON· A) and the OFF-state breakdown voltage BV dsare 2.6 mΩ cm2 and 800 V, respectively. The developed GIT is advantageous for power switching applications.

Original languageEnglish
Pages (from-to)3393-3399
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume54
Issue number12
DOIs
StatePublished - 1 Dec 2007

Keywords

  • Conductivity
  • Conductivity modulation
  • Electric breakdown
  • GaN
  • Gallium compounds
  • High breakdown voltage
  • High power switching device
  • Hole injection
  • Low specific ON-state resistance
  • Modulation
  • Normally off
  • Si substrate
  • Substrates

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