Gate-first TaN/La2O3/SiO2/Ge n-MOSFETs using laser annealing

W. B. Chen, C. H. Wu, B. S. Shie, Albert Chin

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Ω/sq, a small ideality factor of 1.3, and a large ∼105 forward\reverse current in the sourcedrain n+p junction. The laser-annealed gate-first TaN/La2O 3SiO2Ge n-MOSFETs showed a high mobility of 603 cm 2Vs and a good mobility of 304 cm2Vs at a 1.9-nm equivalent oxide thickness.

Original languageEnglish
Article number5560719
Pages (from-to)1184-1186
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number11
DOIs
StatePublished - 1 Nov 2010

Keywords

  • Ge
  • high-κ gate dielectric
  • laser annealing

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