Gate-first low vt Al/TaN/Ir/HfLaO p-mosfet using simple laser annealing

N. C. Su, C. H. Wu, M. F. Chang, J. Z. Huang, S. J. Wang, W. C. Lee, Po-Tsung Lee, H. L. Kao, Albert Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using excimer laser annealing and laser-reflective Al-covered gate, the self-aligned, gate-dielectric first and gate-electrode first Al/TaN/Ir/HfLaO p-MOSFET showed low threshold voltage (Vt) of -0.07 V and good peak hole mobility of 86 cm2/V-s at 1.5 nm equivalent-oxide thickness (EOT).

Original languageEnglish
Title of host publication66th DRC Device Research Conference Digest, DRC 2008
Pages71-72
Number of pages2
DOIs
StatePublished - 1 Dec 2008
Event66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States
Duration: 23 Jun 200825 Jun 2008

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference66th DRC Device Research Conference Digest, DRC 2008
CountryUnited States
CitySanta Barbara, CA
Period23/06/0825/06/08

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