Gate current in OFF-state MOSFET

Jian Chen*, Tung Yi Chan, Ping Keung Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The source of the gate current in MOSFETs due to an applied drain voltage with the gate grounded is studied. It is found that for 100-angstrom or thinner oxide, the gate current is due to Fowler-Nordheim (F-N) tunneling electrons from the gate. With increasing oxide thickness, hot-hole injection becomes the dominant contribution to the gate current. This gate current can cause ID walkout, which is a decrease in the gate-induced drain leakage current, and hole trapping, which becomes important for device degradation study. It can also be used to advantage in EPROM (erasable programmable read-only memory) erasure.

Original languageEnglish
Pages (from-to)203-205
Number of pages3
JournalElectron device letters
Volumev
Issue numbern
DOIs
StatePublished - 1 Jan 1992

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