Gate Current in OFF-State MOSFET

Jian Chen, Ping Keung Ko, Chen-Ming Hu

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

The source of the gate current in MOSFET’s due to an applied drain voltage with the gate grounded is studied. It is found that for 100 Å or thinner oxide, the gate current is due to Fowler-Nordheim (F-N) tunneling of electrons from the gate. With increasing oxide thickness, hot-hole injection becomes the dominant contribution to the gate current. This gate current can cause IDwalkout, which is a decrease in the gate-induced drain leakage current, and hole trapping which becomes important for device degradation study. It can also be used to advantage in EPROM erasure.

Original languageEnglish
Pages (from-to)203-205
Number of pages3
JournalIEEE Electron Device Letters
Volume10
Issue number5
DOIs
StatePublished - 1 Jan 1989

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