Gate-all-around single-crystal-like poly-Si nanowire TFTs with a steep-subthreshold slope

Tung Yu Liu*, Shen Chuan Lo, Jeng-Tzong Sheu

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

We investigate the characteristics of single-crystal-like (SCL) poly-Si nanowire (SCL poly-Si NW) thin-film-transistors with gate-all-around (GAA) structures. The GAA SCL poly-Si NWs are prepared by a modified sidewall spacer process utilizing an amorphous silicon (α-Si) mesa structure. The combination of the high surface-to-volume ratio of the NW and a nominal gate length of 0.25 μm lead to clear improvement in electrical performance, including a steep subthreshold swing (90±15mV/dec), a virtual absence of drain-induced barrier lowering (21±13mV/V), and a very high ON/OFF current ratio ∼7× 107(VD=1VVG=3V).

Original languageEnglish
Article number6475961
Pages (from-to)523-525
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number4
DOIs
StatePublished - 5 Apr 2013

Keywords

  • Gate-all-around (GAA)
  • nanowire (NW)
  • single-crystal-like (SCL)
  • thin film transistor (TFT)

Fingerprint Dive into the research topics of 'Gate-all-around single-crystal-like poly-Si nanowire TFTs with a steep-subthreshold slope'. Together they form a unique fingerprint.

Cite this