The gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with single-crystal-like nanowire (NW) channels (SCLNCs) are demonstrated and characterized. Via the nanoscale nitride spacer, the Si NW can be easily transformed within one crystalline grain of the two-shot sequential-lateral- solidification poly-Si film. As compared with the planar ones, the GAA-SCLNC TFTs showed more excellent characteristics. The results clearly show that the variations of device characteristics can be reduced by increasing the numbers of NWs in the channels and an average mobility above 410 cm2V s with a low standard deviation can be achieved for the GAA-SCLNC TFTs with 20-NW channels.
- Field-effect mobility
- gate-all-around (GAA)
- nanowire (NW)
- nitride spacer
- sequential lateral solidification (SLS)