Gate-all-around poly-Si TFTs with single-crystal-like nanowire channels

Tsung Kuei Kang*, Ta Chuan Liao, Chia Min Lin, Han Wen Liu, Fang Hsing Wang, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with single-crystal-like nanowire (NW) channels (SCLNCs) are demonstrated and characterized. Via the nanoscale nitride spacer, the Si NW can be easily transformed within one crystalline grain of the two-shot sequential-lateral- solidification poly-Si film. As compared with the planar ones, the GAA-SCLNC TFTs showed more excellent characteristics. The results clearly show that the variations of device characteristics can be reduced by increasing the numbers of NWs in the channels and an average mobility above 410 cm2V s with a low standard deviation can be achieved for the GAA-SCLNC TFTs with 20-NW channels.

Original languageEnglish
Article number5986683
Pages (from-to)1239-1241
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number9
DOIs
StatePublished - 1 Sep 2011

Keywords

  • Field-effect mobility
  • gate-all-around (GAA)
  • nanowire (NW)
  • nitride spacer
  • sequential lateral solidification (SLS)
  • single-crystalline-like

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