Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels

Jung Ruey Tsai*, Ko Hui Lee, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A novel gate-all-around (GAA) poly-Si floating-gate (FG) memory device with triangular nanowire (NW) channels was fabricated and characterized in this work. The enhanced electric field around the corners of the NW channels boosts more electrons tunneling through the tunnel oxide layer during programming and erasing (P/E) processes, and thus the operation voltage markedly decreases. Furthermore, the nonlocalized trapping feature characteristic of the FG makes the injection of electrons easier during the programming operation, which was demonstrated by technology computer-aided design (TCAD) simulations.

Original languageEnglish
Article number04ED14
JournalJapanese Journal of Applied Physics
Volume53
Issue number4 SPEC. ISSUE
DOIs
StatePublished - 1 Jan 2014

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