Ga0.5in0.5P barrier layer for wet oxidation of AlAs

Shih Chang Lee*, Wei-I Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We study the stability of Ga0.5In0.5P and Al0.4Ga0.6As barrier layers for wet thermal oxidation of AlAs on GaAs. Samples with a Ga0.5In0.5P or Al0.4Ga0.6As barrier layer are oxidized in a water vapor environment under various oxidation conditions. The results of photoluminescence and secondary-ion mass spectrometry (SIMS) depth profile measurements indicate that the Ga0.5In0.5P barrier layer is more stable than the Al0.4Ga0.6As layer at higher oxidation temperatures and longer periods of oxidation time.

Original languageEnglish
Pages (from-to)2583-2584
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number5 A
DOIs
StatePublished - 1 May 2000

Keywords

  • AiGaAs
  • AlAs
  • GaInp
  • GaAs
  • Interface
  • Wet oxidation

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